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A Product Line of
Diodes Incorporated
ZXLD1322
Switching NPN Transistor
Symbol
I SW
Parameter
Average continuous switch current
(c)
Condition
Min.
Typ.
Max.
2
Unit
A
I BON(max)
Maximum base current into switch
transistor from internal drive circuit (d)
2V<V IN <18V BIAS pin at 0V
30
50
70
mA
Base current into switch transistor
I BON
using external resistor (R BASE ) from
R BIAS = 1680 ?
10
mA
BIAS pin to ground
V (BR)CE
V CE(sat)
h FE
C OBO
t(on)
t(off)
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Static forward current transfer ratio
Output capacitance
Turn-on time
Turn-off time
I C = 10mA
I C = 0.1A, I B = 10mA
I C = 2A, I B = 50mA (e)
I C = 200mA, V CE = 2V
I C = 2A, V CE = 2V
V CB = 10V,f = 1MHz
Ic = 0 to I C = 2A V IN = 10V
I C = 2A to Ic < 100 μ A
15
50
120
209
116
64
30
28
V
mV
pF
ns
ns
High-Side Current Monitor
Symbol
V M_VIN
V MON
I_ M_VIN
TCO (MON)
BW
Parameter
Supply voltage
Sense voltage
Input current
Temperature coefficient
Bandwidth
Condition
=V (VIN) – V M_VIN
Measured into M_VIN pin
V MON =10mV
V MON =100mV
V MON =10mV
V MON =100mV
Min.
2.5
0
Typ.
100
0.08
370
150
350
2.5
Max.
18
200
1
Unit
V
mV
μA
ppm/K
KHz
Mhz
Gm
Tran conductance
Δ I OUT / Δ VMON
1
mA/V
A CC
Accuracy
R M = 0.1 ?
V MON = 100mV
-3
3
%
Reference Current Monitor
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
V ADJ
TCO
(MON)
BW
Gm
Adjust Voltage
Temperature coefficient
Bandwidth
Tran conductance
Δ I OUT / Δ V ADJ
V ADJ = 50mV
V ADJ = 500mV
V ADJ = 50mV
V ADJ = 500mV
0
160
200
275
3
200
500
mV
ppm/K
KHz
Mhz
μA/V
A CC
Accuracy
V ADJ = 500mV
-3
3
%
Notes :
(c) Measured under pulse conditions.
(d) This current is measured via the collectors and emitters of the switch with these connected to ground (0V)
(e) Measured under pulse conditions. Peak Current = I C
ZXLD1322
Document number: DS32166 Rev. 3 - 2
6 of 17
www.diodes.com
April 2010
? Diodes Incorporated
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